Heteroepitaxy of Semiconductors: Theory, Growth, and Characterization, Second Edition
John E. Ayers, Tedi Kujofsa, Paul Rago, Johanna Raphael
ISBN: 9781482254358
Vydavatelství: Taylor & Francis
Rok vydání: 2016
Vydání: 2
Vazba: Hardback
Počet stran: 659
Původní cena: 5 895 Kč
Výstavní cena:
5 306 Kč(t.j. po slevě 10%)
(Cena je uvedena včetně 10% DPH)
Katalogová cena: 175 GBP
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In the past ten years, heteroepitaxy has continued to increase in importance with the explosive growth of the electronics industry and the development of a myriad of heteroepitaxial devices for solid state lighting, green energy, displays, communications, and digital computing. Our ever-growing understanding of the basic physics and chemistry underlying heteroepitaxy, especially lattice relaxation and dislocation dynamic, has enabled an ever-increasing emphasis on metamorphic devices. To reflect this focus, two all-new chapters have been included in this new edition. One chapter addresses metamorphic buffer layers, and the other covers metamorphic devices. The remaining seven chapters have been revised extensively with new material on crystal symmetry and relationships, III-nitride materials, lattice relaxation physics and models, in-situ characterization, and reciprocal space maps.